7N80 N-Channel Mosfet Transistor 800V 6.6A

Description

• N-Channel Mosfet
• 100% avalanche tested
• Low Gate Charge (Typ. 27nC)
• Low Crss (Typ. 10Pf)
• Drain Current: ID= 6.6A at TC= 25℃
• Drain Source Voltage: VDSS = 800V
• Static Drain-Source On-Resistance: RDS(on) < 1.9 Ω
• Package: TO-220F

7N80 N-Channel enhancement mode power field-effect transistors designed based on Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology specially tailored to attenuate on-state resistance, provides superior switching performance. And also withstand high energy pulse within the avalanche and commutation mode. These devices are compatible for high-efficiency switching DC/DC converters, switch-mode power supplies, also active power supply correction, electronic lamp ballast based n half-bridge topology . 7N80 manufactured in TO-PN package that is universally accepted for all commercial-industrial applications. 7N80 provides a Drain Source Voltage of 800V at a drain current 6.6A. These MOSFET Transistors designed explicitly to achieve extremely low on-resistance per silicon area and lower gate charge performance. This feature makes this device ideal for use as a primary switch in advanced high-efficiency isolated DC-DC converters.

A MOSFET designed as a special type of metal–oxide–semiconductor field-effect transistor (MOSFET) explicitly to handle significant power levels. This N-Channel MOSFET defined as a type of MOSFET in which the channel of the MOSFET made up of a majority of electrons as current carriers. When the MOSFET activated and is on, the majority of the current flowing are electrons moving through the channel. It is one of the prominent power semiconductor device in world, due to its low gate drive power, wide bandwidth. This makes it ideal for use in wide range of applications such as in low-voltage (less than 200V) switch.

APPLICATIONS

• Used in various power switching circuit for system miniaturization and higher efficiency.
• Power switch circuit of adaptor and charger